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| BUZ 32 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 32 VDS 200 V ID 9.5 A RDS(on) 0.4 Package TO-220 AB Ordering Code C67078-S1310-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 9.5 Unit A ID IDpuls 38 TC = 29 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 9.5 6.5 mJ ID = 9.5 A, VDD = 50 V, RGS = 25 L = 2 mH, Tj = 25 C Gate source voltage Power dissipation 120 VGS Ptot 20 75 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1.67 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 32 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.3 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 200 V, VGS = 0 V, Tj = 25 C VDS = 200 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.4 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 6 A Semiconductor Group 2 07/96 BUZ 32 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 3 4.6 400 85 45 - S pF 530 130 70 ns 10 15 VDS 2 * ID * RDS(on)max, ID = 6 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 40 60 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 55 75 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 30 40 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 32 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.4 200 0.6 9.5 38 V 1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 19 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 32 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 10 A 80 W Ptot ID 60 8 7 50 6 5 4 40 30 3 20 2 10 0 0 1 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 t = 7.6s p 10 s Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A /I D ID 10 1 =V ZthJC 100 s 10 0 R DS (o n) DS 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 0.05 0.02 DC single pulse 0.01 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 32 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 22 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 1.3 Ptot = 75W l kj i VGS [V] a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 1.1 a b c d e f g h ID 18 16 g h RDS (on) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 b c 14 f d e f g 12 10 8 d e h i j k 10.0 l 20.0 i j k 6 c 4 b 2 a 0.1 0.0 V 16 0 0 0 2 4 6 8 10 12 4 8 12 16 A 22 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 13 A 11 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 6.0 S 5.0 ID 10 9 8 gfs 4.5 4.0 3.5 7 3.0 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V 10 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 A ID 12 VGS Semiconductor Group 6 07/96 BUZ 32 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 6 A, VGS = 10 V 1.3 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 1.1 98% RDS (on) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -20 20 60 100 C 160 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 0 A IF 10 1 Ciss 10 -1 10 0 Coss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 32 Avalanche energy EAS = (Tj ) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 , L = 2 mH 130 mJ 110 Typ. gate charge VGS = (QGate) parameter: ID puls = 14 A 16 V EAS 100 90 80 70 VGS 12 10 0,2 VDS max 8 0,8 VDS max 60 50 40 30 20 10 0 20 0 40 60 80 100 120 C 160 0 4 8 12 16 20 24 28 32 nC 38 4 6 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 32 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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